All-reflective optical systems, due to their material absorption and low refractive index, are used to create the most suitable devices in extreme ultraviolet lithography (EUVL).

由于材料的吸收和低折射率问题，极紫外光刻所采用的光学系统发展趋势是全反射型。

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A new design of off-axis five mirrors optics was presented which was used to extreme-ultraviolet lithography. It was very suit for the commercialization at optical quality and free work distance.

本文探讨了一种可应用于极紫外光刻光学系统的离轴五反射镜系统，它在光学质量、自由工作距离方面满足了极紫外光刻商业化的要求。

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To avoid heading into the twilight zone of extreme ultraviolet lithography (or, worse, X-rays), chipmakers need to shrink the light.

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Under the Co-Investment Program, which was announced on July 9, 2012, ASML will accelerate the development of key lithography technologies needed to extend Moore's Law, notably Extreme Ultraviolet (EUV) lithography.

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The specific technology areas that Intel is investing in are 450mm wafers and extreme ultraviolet (EUV) lithography.

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